STP6NK50Z
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Краткое описание:
500V 5.6A N-CH MOSFET, 1.2R, TO-220 Power Transistor
Дополнительная информация
N-channel power MOSFET with 500V drain-source breakdown voltage and 5.6A continuous drain current. Features 1.2 ohm maximum drain-source on-resistance and 90W maximum power dissipation. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-220 through-hole mount with 3 pins. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 23ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.2R |
| Package/Case | TO-220 |
| Current Rating | 5.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 1000 |
| Input Capacitance | 690pF |
| Power Dissipation | 90W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 31ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1.2R |
| Drain to Source Breakdown Voltage | 500V |
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