STP6NM60N

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STP6NM60N - Stmicroelectronics
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Краткое описание: 600V 4.6A N-CH MOSFET TO-220 920mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-CHANNEL POWER MOSFET, TO-220 package, featuring 600V drain-source breakdown voltage and 4.6A continuous drain current. Offers 920mΩ maximum drain-source on-resistance and 45W power dissipation. Designed for through-hole mounting with a 3-pin configuration. Includes a 25V gate-to-source voltage rating and 420pF input capacitance. Operates across a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Series MDmesh™
Polarity N-CHANNEL
Fall Time 9ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 920mR
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 420pF
Power Dissipation 45W
Number of Elements 1
Radiation Hardening No
Turn-Off Delay Time 40ns
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 920mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 4.6A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 920mR
Drain to Source Breakdown Voltage 600V

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