STP78NF55-08
Краткое описание:
55 V 80 A N-Channel STripFET II Power MOSFET
Дополнительная информация
This N-channel power MOSFET is rated for 55 V drain-source operation and is offered in a TO-220 package. It features a typical drain-source on-resistance of 0.0065 ohm and supports up to 80 A continuous drain current with 300 W total power dissipation at 25 °C case temperature. The device is 100% avalanche tested and is designed with low input capacitance and low gate charge for efficient switching. It is intended for switching applications including advanced high-efficiency isolated DC-DC converters for telecom and computer systems.
| RoHS | RoHS Compliant |
| Fall Time | 35ns |
| Rise Time | 110ns |
| Channel Type | N-channel |
| Avalanche Current | 40A |
| Input Capacitance | 3740pF |
| Total Gate Charge | 112 typnC |
| Output Capacitance | 830pF |
| Turn-On Delay Time | 20ns |
| Gate-Source Voltage | ±20V |
| Turn-Off Delay Time | 75ns |
| Drain-Source Voltage | 55V |
| Pulsed Drain Current | 320A |
| Gate Threshold Voltage | 2 to 4V |
| Total Power Dissipation | 300W |
| Continuous Drain Current | 80A |
| Reverse Transfer Capacitance | 265pF |
| Single Pulse Avalanche Energy | 1000mJ |
| Thermal Resistance Junction-Case | 0.5°C/W |
| Static Drain-Source On-Resistance | 0.0065 typohm |