STP7N52K3
Снят с производства
Увеличить
Краткое описание:
525V N-Channel MOSFET, 6A, 850mR Rds On, TO-220
Дополнительная информация
N-channel SuperMESH™ Power MOSFET, 525V Vds, 6A continuous drain current, and 850mΩ max Rds(on). Features include a 90W power dissipation, TO-220 through-hole package, and 150°C max operating temperature. Typical switching times include 11ns turn-on delay and 19ns fall time. RoHS compliant with a 3.75V threshold voltage.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 980mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 737pF |
| Power Dissipation | 90W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 525V |
| Drain-source On Resistance-Max | 850mR |
| Drain to Source Breakdown Voltage | 525V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
