STP7NK80Z
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Краткое описание:
800V N-CH MOSFET, 5.2A, 1.8 Ohm, TO-220
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 800V drain-to-source breakdown voltage and 5.2A continuous drain current. This through-hole component offers a low 1.8 Ohm typical drain-to-source resistance and 125W maximum power dissipation. Designed for demanding applications, it operates within a -55°C to 150°C temperature range and is housed in a standard TO-220 package. Key switching characteristics include 20ns turn-on delay and 20ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.8R |
| Package/Case | TO-220 |
| Current Rating | 5.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 50 |
| Input Capacitance | 1.138nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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