STP80N10F7
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Краткое описание:
N-Ch MOSFET 100V 80A 10mR TO-220 Power Transistor
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. Offers low on-resistance of 8.5mΩ typical (10mΩ max) and 110W maximum power dissipation. Packaged in a TO-220-3 through-hole mount with a 175°C maximum operating temperature. Includes fast switching characteristics with turn-on delay of 19ns and fall time of 13ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 15.75mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | DeepGATE™, STripFET™ VII |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 10mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 3.1nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 19ns |
| Turn-Off Delay Time | 36ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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