STP80NF06

Не рекомендуется для новых проектов
STP80NF06 - Stmicroelectronics
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Краткое описание: 60V 80A N-CH MOSFET TO-220 8mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-channel power MOSFET featuring 60V drain-source breakdown voltage and 80A continuous drain current. Offers a low 8mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 300W and operates across a wide temperature range from -65°C to 175°C. Includes fast switching characteristics with turn-on delay time of 25ns and fall time of 25ns.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 25ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 8mR
Package/Case TO-220
Current Rating 80A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 50
Input Capacitance 3.85nF
Power Dissipation 300W
Threshold Voltage 3V
Number of Elements 1
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 70ns
Reach SVHC Compliant No
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Drain to Source Resistance 10mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 8mR
Drain to Source Breakdown Voltage 60V