N-channel power MOSFET featuring 60V drain-source breakdown voltage and 80A continuous drain current. Offers a low 8mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 300W and operates across a wide temperature range from -65°C to 175°C. Includes fast switching characteristics with turn-on delay time of 25ns and fall time of 25ns.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
4.6mm |
| Height |
9.15mm |
| Length |
10.4mm |
| Series |
STripFET™ II |
| Polarity |
N-CHANNEL |
| Fall Time |
25ns |
| Lead Free |
Lead Free |
| Packaging |
Rail/Tube |
| Rds On Max |
8mR |
| Package/Case |
TO-220 |
| Current Rating |
80A |
| RoHS Compliant |
Yes |
| DC Rated Voltage |
60V |
| Package Quantity |
50 |
| Input Capacitance |
3.85nF |
| Power Dissipation |
300W |
| Threshold Voltage |
3V |
| Number of Elements |
1 |
| Turn-On Delay Time |
25ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
70ns |
| Reach SVHC Compliant |
No |
| Max Power Dissipation |
300W |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-65°C |
| Drain to Source Resistance |
10mR |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
80A |
| Drain to Source Voltage (Vdss) |
60V |
| Drain-source On Resistance-Max |
8mR |
| Drain to Source Breakdown Voltage |
60V |