STP80NF12

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STP80NF12 - Stmicroelectronics
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Краткое описание: 120V 80A N-CH MOSFET TO-220 18mR RdsOn
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-CHANNEL MOSFET, STripFET™ II series, featuring 120V drain-source breakdown voltage and a maximum continuous drain current of 80A. This through-hole mounted component offers a low drain-source on-resistance of 18mR at 10V Vgs. Operating across a wide temperature range from -55°C to 175°C, it supports a maximum power dissipation of 300W. The TO-220 package houses a single N-channel element with a gate-source voltage rating of 20V.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 115ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 18mR
Package/Case TO-220
Current Rating 80A
RoHS Compliant Yes
DC Rated Voltage 120V
Package Quantity 1
Input Capacitance 4.3nF
Power Dissipation 300W
Threshold Voltage 2V
Number of Elements 1
Turn-On Delay Time 40ns
Turn-Off Delay Time 134ns
Reach SVHC Compliant No
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 18mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 120V
Drain-source On Resistance-Max 18mR
Drain to Source Breakdown Voltage 120V

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