STP8N65M5
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Краткое описание:
650V 7A N-CH Power MOSFET TO-220AB Through Hole
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source voltage and 7A continuous drain current. This single-element silicon transistor utilizes MDmesh V process technology and offers a low 600mΩ drain-source resistance at 10V. Packaged in a TO-220AB through-hole configuration with 3 pins, it supports a maximum power dissipation of 70W and operates across a wide temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-220AB |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220AB |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 2.7(Max) |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Weight (g) | 1.9 |
| Package Width (mm) | 4.6(Max) |
| Process Technology | MDmesh V |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.15(Max) |
| Package Length (mm) | 10.4(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.68(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 70000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 15nC |
| Typical Gate Charge @ Vgs | 15@10VnC |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Drain Source Resistance | 600@10VmOhm |
| Typical Input Capacitance @ Vds | 690@100VpF |
| Maximum Continuous Drain Current | 7A |
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