STP8NM60D

Снят с производства
STP8NM60D - Stmicroelectronics
Увеличить
Краткое описание: N-CHANNEL MOSFET 600V 8A TO-220AB
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The STP8NM60D is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 8A. The device is packaged in a TO-220AB flange mount package and is lead free and RoHS compliant. It has a maximum power dissipation of 100W and a gate to source voltage of 30V.
RoHS Compliant
Mount Through Hole
Series MDmesh™
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 1R
Package/Case TO-220AB
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 380pF
Power Dissipation 100W
Turn-Off Delay Time 26ns
Max Power Dissipation 100W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Drain to Source Resistance 1R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.