STP95N4F3

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STP95N4F3 - Stmicroelectronics
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Краткое описание: N-CH 40V 6.2mR 80A TO-220 Power MOSFET
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. Offers low 5.4mOhm typical on-resistance (6.2mR max) for efficient power switching. Packaged in a TO-220 through-hole mount, this device boasts a maximum power dissipation of 110W and operates across a wide temperature range of -55°C to 175°C. Includes fast switching characteristics with 15ns turn-on and 15ns fall times.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series STripFET™ III
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 6.2mR
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 2.2nF
Power Dissipation 110W
Threshold Voltage 2V
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 40ns
Reach SVHC Compliant No
Max Power Dissipation 110W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 6.2mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 40V
Drain to Source Breakdown Voltage 40V

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