STP9NK50Z
Производится
Увеличить
Краткое описание:
500V N-Ch MOSFET, 7.2A, 850mR RdsOn, TO-220
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 7.2A continuous drain current. Offers 850mΩ maximum drain-source on-resistance and 110W power dissipation. Designed with Zener protection and a SuperMESH™ series, this component is housed in a TO-220 package for through-hole mounting. Key electrical characteristics include a 3.75V threshold voltage and fast switching times with turn-on delay of 17ns and fall time of 22ns. RoHS compliant and operates within a -55°C to 150°C temperature range.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 850mR |
| Package/Case | TO-220 |
| Current Rating | 7.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 50 |
| Input Capacitance | 910pF |
| Power Dissipation | 110W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 850mR |
| Drain to Source Breakdown Voltage | 500V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
