STP9NK60Z
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Краткое описание:
600V 7A N-CH MOSFET, 950mR Rds(on), TO-220
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 7A continuous drain current. Offers 950mΩ typical drain-source on-resistance and 125W maximum power dissipation. This Zener-protected device is housed in a TO-220 package with through-hole mounting. Key electrical characteristics include a 3.75V threshold voltage and fast switching times with a 15ns fall time. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 950mR |
| Package/Case | TO-220 |
| Current Rating | 7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 50 |
| Input Capacitance | 1.11nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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