STP9NK60ZFP
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Краткое описание:
600V 7A N-CH MOSFET TO-220FP, 950mR Rds(on)
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 7A continuous drain current. This through-hole component offers a low 0.85 Ohm typical drain-source resistance and 30W power dissipation. Designed with Zener protection, it operates within a -55°C to 150°C temperature range and is housed in a TO-220FP package. Key switching characteristics include a 15ns fall time, 19ns turn-on delay, and 43ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Packaging | Rail/Tube |
| Rds On Max | 950mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.11nF |
| Power Dissipation | 30W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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