STP9NK90Z
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Краткое описание:
900V N-Channel MOSFET, 8A, 1.3 Ohm, TO-220
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 8A continuous drain current. This through-hole component offers a low 1.1 Ohm typical drain-source on-resistance and 160W maximum power dissipation. Housed in a TO-220 package, it operates from -55°C to 150°C with a 30V gate-source voltage rating. Key switching characteristics include a 28ns fall time, 55ns turn-off delay, and 22ns turn-on delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 28ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.3R |
| Package/Case | TO-220 |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| Package Quantity | 50 |
| Input Capacitance | 2.115nF |
| Power Dissipation | 160W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.3R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 1.3R |
| Drain to Source Breakdown Voltage | 900V |
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