STPSC20H12G-TR
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Краткое описание:
SiC Power Schottky Diode, 1200V, 20A, 175C
Дополнительная информация
High surge silicon carbide power Schottky rectifier diode, featuring a 1200 V repetitive peak reverse voltage and 20 A current rating. This two-terminal, single-element device utilizes silicon carbide for its diode element material, enabling operation across a wide temperature range from -40°C to 175°C.
| REACH | Compliant |
| Diode Type | RECTIFIER DIODE |
| Military Spec | False |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Diode Element Material | SILICON CARBIDE |
| Max Operating Temperature | 175 |
| Min Operating Temperature | -40 |
| Rep Pk Reverse Voltage-Max | 1200 |
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