STQ1HN60K3-AP
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Краткое описание:
600V N-CH Power MOSFET, 6.7 Ohm, TO-92, Through Hole
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET, 600V drain-source breakdown voltage, 6.7 Ohm typical drain-source resistance, and 1.2A continuous drain current. Features include 31ns fall time, 23ns turn-off delay, and 7ns turn-on delay. Packaged in a TO-92-3 through-hole mount, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 3W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.8mm |
| Height | 2.8mm |
| Length | 4.8mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 31ns |
| Packaging | Ammo Pack |
| Rds On Max | 8R |
| Package/Case | TO-92-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 140pF |
| Power Dissipation | 3W |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.7R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
