STQ1HNK60R-AP
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Краткое описание:
600V 1A N-Ch MOSFET, TO-92, 7.3 Ohm Rds(on)
Дополнительная информация
N-channel SuperMESH™ PowerMOSFET featuring 600V drain-source voltage and 400mA continuous drain current. This through-hole component offers a typical on-resistance of 7.3 Ohms and a maximum of 8.5 Ohms. Operating across a wide temperature range from -55°C to 150°C, it boasts a 3W power dissipation and a 3V threshold voltage. Key switching parameters include a 6.5ns turn-on delay and a 19ns turn-off delay, with a 25ns fall time. Encased in a TO-92 package, this RoHS compliant device is supplied in cut tape.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.94mm |
| Height | 4.95mm |
| Length | 4.95mm |
| Series | SuperMESH™ |
| Fall Time | 25ns |
| Packaging | Cut Tape |
| Rds On Max | 8.5R |
| Package/Case | TO-92 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 156pF |
| Power Dissipation | 3W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Voltage (Vdss) | 600V |
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