STQ1NK80ZR-AP
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Краткое описание:
N-Ch 800V 0.3A MOSFET TO-92 16R Rds(on)
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 300mA continuous drain current. This SuperMESH™ device offers a typical 13 Ohm on-resistance and is housed in a TO-92 package. Key specifications include a 3.75V threshold voltage, 160pF input capacitance, and fast switching times with 8ns turn-on and 22ns turn-off delays. Maximum power dissipation is 3W, with operating temperatures ranging from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16R |
| Nominal Vgs | 3.75V |
| Package/Case | TO-92 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 160pF |
| Power Dissipation | 3W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 16R |
| Drain to Source Breakdown Voltage | 800V |
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