STQ2LN60K3-AP
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Краткое описание:
N-CHANNEL JFET 600V 600mA TO-226-3 Through Hole
Дополнительная информация
The STQ2LN60K3-AP is a N-CHANNEL Junction Field-Effect Transistor with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 2.5W and a continuous drain current of 600mA. The transistor features a drain to source breakdown voltage of 600V and a drain to source resistance of 4.5 ohms. It is packaged in a TO-226-3 case and is available in a through hole mount configuration. The STQ2LN60K3-AP is RoHS compliant and is part of the SuperMESH3 series.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 21ns |
| Packaging | Cut Tape |
| Rds On Max | 4.5R |
| Package/Case | TO-226-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 235pF |
| Power Dissipation | 2.5W |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23.5ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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