STS1HNK60
Снят с производства
Увеличить
Краткое описание:
600V 300mA N-CH Si MOSFET SOP-8
Дополнительная информация
N-channel MOSFET, surface mount, SOP-8 package. Features 600V drain-to-source breakdown voltage and 300mA continuous drain current. Offers 8.5 Ohm Rds On, 156pF input capacitance, 6.5ns turn-on delay, and 25ns fall time. Maximum power dissipation is 2W, with operating temperatures from -65°C to 150°C. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 8.5R |
| Package/Case | SO |
| Current Rating | 300mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 156pF |
| Power Dissipation | 2W |
| Turn-On Delay Time | 6.5ns |
| Radiation Hardening | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 8.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
