STS1NK60Z
Производится
Увеличить
Краткое описание:
600V N-CH MOSFET, 0.25A, 15Ω, SO, SuperMESH™
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 250mA continuous drain current. Surface mountable in an SO-8 package, this device offers a low 15 Ohm typical drain-source on-resistance. Key switching characteristics include a 5.5ns turn-on delay and 28ns fall time, with a maximum power dissipation of 2W. Operating across a wide temperature range of -55°C to 150°C, this lead-free and RoHS compliant component is ideal for power switching applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 28ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 15R |
| Package/Case | SO |
| Current Rating | 250mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 94pF |
| Power Dissipation | 2W |
| Turn-On Delay Time | 5.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 250mA |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
