STS26N3LLH6
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Краткое описание:
N-Ch MOSFET 30V 26A 4.4mR SOIC Surface Mount
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 26A. Offers a low 4.4mΩ drain-source on-resistance. This surface mount SOIC package component boasts a 1V gate-source threshold voltage and 4.04nF input capacitance. Designed for efficient switching with a 17ns turn-on delay and 46ns fall time, operating within a -55°C to 150°C temperature range.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ VI, DeepGATE™ |
| Polarity | N-CHANNEL |
| Fall Time | 46ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.4mR |
| Nominal Vgs | 1V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.04nF |
| Power Dissipation | 2.7W |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.4mR |
| Drain to Source Breakdown Voltage | 30V |
