STS3C2F100

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STS3C2F100 - Stmicroelectronics
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Краткое описание: N/P-Channel JFET, 100V, 3A, 2-Ch, SO, Surface Mount
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Dual-channel N-channel and P-channel MOSFET in a small signal configuration, featuring a 100V drain-to-source breakdown voltage and a 3A continuous drain current. This surface-mount device offers a low 145mΩ Rds On, 7.5ns fall time, and 33ns turn-off delay time. Operating across a wide temperature range from -55°C to 150°C, it supports up to 2W of power dissipation and has an input capacitance of 460pF. Packaged in SO format on tape and reel, this RoHS compliant component is lead-free.
RoHS Compliant
Mount Surface Mount
Series STripFET™
FET Type N and P-Channel
Polarity P-CHANNEL
Fall Time 7.5ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 145mR
Package/Case SO
Current Rating 3A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 2500
Input Capacitance 460pF
Power Dissipation 2W
Radiation Hardening No
Turn-Off Delay Time 33ns
Max Power Dissipation 2W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 145mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3A
Drain to Source Voltage (Vdss) 100V
Drain to Source Breakdown Voltage 100V