STS3P6F6
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Краткое описание:
P-CH JFET 60V 3A 160mR SO-8
Дополнительная информация
P-channel Power MOSFET, Surface Mount, SO-8 package. Features 60V drain-source breakdown voltage, 3A continuous drain current, and low 130mΩ typical drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 2.7W. Includes fast switching characteristics with fall time of 3.7ns and turn-on delay of 6.4ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | P-CHANNEL |
| Fall Time | 3.7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 160mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 340pF |
| Power Dissipation | 2.7W |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Max Power Dissipation | 2.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 130mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 160mR |
| Drain to Source Breakdown Voltage | -60V |
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