STS5DNF20V
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Краткое описание:
2-Ch N-Ch MOSFET, 20V, 5A, 40mR, SOIC, Power
Дополнительная информация
Dual N-channel power MOSFET featuring 20V drain-source breakdown voltage and 5A continuous drain current. Offers a maximum drain-source on-resistance of 40mΩ at 10V Vgs. Surface-mount SOIC package with a maximum power dissipation of 2W. Includes fast switching characteristics with a 7ns turn-on delay and 10ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.65mm |
| Length | 5mm |
| Series | STripFET™ II |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | SOIC |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 2500 |
| Input Capacitance | 460pF |
| Power Dissipation | 2W |
| Threshold Voltage | 2.7V |
| Number of Elements | 2 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 40mR |
| Drain to Source Breakdown Voltage | 20V |
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