STS7NF60L
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Краткое описание:
60V 7.5A N-CH MOSFET SOIC 17mR Rds(on)
Дополнительная информация
N-channel MOSFET featuring 60V drain-source breakdown voltage and 7.5A continuous drain current. Offers low 17mΩ drain-source on-resistance at a nominal Vgs of 1V, with a maximum of 19.5mΩ. Designed for surface mounting in a SOIC package, this component boasts fast switching speeds with turn-on delay of 15ns and fall time of 20ns. Maximum power dissipation is 2.5W, operating across a temperature range of -55°C to 150°C, and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 19.5mR |
| Nominal Vgs | 1V |
| Package/Case | SOIC |
| Current Rating | 7.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 1.7nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 47ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 17mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 19.5mR |
| Drain to Source Breakdown Voltage | 60V |
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