STS8C5H30L
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Краткое описание:
N/P-Ch 30V 8A/5A 22mR SOIC Power MOSFET
Дополнительная информация
Dual N-channel and P-channel Power MOSFET in SOIC package. Features 30V drain-source breakdown voltage, 22mΩ maximum drain-source on-resistance, and 8A continuous drain current. Operates with a gate-source voltage up to 16V and a threshold voltage of 1.6V. Offers a maximum power dissipation of 2W and a maximum operating temperature of 150°C. Includes fast switching characteristics with a fall time of 35ns and turn-off delay of 125ns. Surface mountable with lead-free and RoHS compliant construction.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.25mm |
| Length | 5mm |
| Series | STripFET™ III |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Package/Case | SOIC |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 857pF |
| Power Dissipation | 2W |
| Threshold Voltage | 1.6V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 125ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22MR |
| Drain to Source Breakdown Voltage | 30V |
