STS8DN3LLH5
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Краткое описание:
N-CH Power MOSFET 30V 10A 8-Pin SO N
Дополнительная информация
N-channel Power MOSFET, dual dual drain configuration, featuring 30V drain-source voltage and 10A continuous drain current. This surface-mount component is housed in an 8-pin SO N (SOP) package with gull-wing leads, measuring 5mm x 4mm x 1.65mm. Key electrical characteristics include a maximum drain-source on-resistance of 19mΩ at 10V and a typical gate charge of 5.4nC at 4.5V. Operating temperature range spans from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MS-012AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SCR76 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SO N |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4(Max) |
| Package Description | Small Outline IC Narrow Body |
| Package Family Name | SOP |
| Package Height (mm) | 1.65(Max) |
| Package Length (mm) | 5(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.75(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2700mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Output Capacitance | 132pF |
| Maximum Gate Source Voltage | ±22V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 19@10VmOhm |
| Typical Input Capacitance @ Vds | 724@25VpF |
| Maximum Continuous Drain Current | 10A |
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