STU150N3LLH6
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Краткое описание:
30V 80A N-CH MOSFET TO-251 3.3mR Power Transistor
Дополнительная информация
N-CHANNEL POWER MOSFET, TO-251 package, offering 30V drain-source breakdown voltage and 80A continuous drain current. Features low 3.3mΩ Rds On resistance, 110W maximum power dissipation, and operates across a -55°C to 175°C temperature range. Includes fast switching characteristics with 17ns turn-on delay and 46ns fall time.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.9mm |
| Length | 6.6mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 46ns |
| Packaging | Rail/Tube |
| Rds On Max | 3.3mR |
| Package/Case | TO-251 |
| RoHS Compliant | No |
| Package Quantity | 75 |
| Input Capacitance | 4.04nF |
| Power Dissipation | 110W |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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