STU2N95K5
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Краткое описание:
950V N-Ch MOSFET, 2A, 5 Ohm, IPAK, SuperMESH5
Дополнительная информация
N-channel SuperMESH™ 5 power MOSFET featuring 950V drain-to-source breakdown voltage and 2A continuous drain current. This through-hole component offers a 5 Ohm typical drain-to-source resistance and is housed in a TO-251-3 IPAK package. Key electrical characteristics include 105pF input capacitance and fast switching times with turn-on delay at 8.5ns and fall time at 32.5ns. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant device supports up to 45W maximum power dissipation.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.2mm |
| Length | 6.6mm |
| Series | SuperMESH5™ |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 32.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 5R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 105pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8.5ns |
| Turn-Off Delay Time | 20.5ns |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 950V |
| Drain to Source Breakdown Voltage | 950V |
