STU2NK100Z
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Краткое описание:
N-Ch MOSFET 1kV 1.85A 8.5 Ohm IPAK Zener-Protected
Дополнительная информация
N-channel SuperMESH™ Power MOSFET, 1000V drain-source breakdown voltage, 1.85A continuous drain current, and 8.5 Ohm max drain-source resistance. Features Zener protection, 3.75V threshold voltage, and 30V gate-source voltage. Packaged in IPAK (TO-251-3) with through-hole mounting, this RoHS compliant component offers fast switching with turn-on delay of 7.2ns and fall time of 32.5ns. Maximum power dissipation is 70W, operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.9mm |
| Length | 6.6mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 32.5ns |
| Packaging | Rail/Tube |
| Rds On Max | 8.5R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 499pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 7.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41.5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 1.85A |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain to Source Breakdown Voltage | 1kV |
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