STU3N62K3
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Краткое описание:
620V N-Channel Power MOSFET, 2.7A, 2.5 Ohm, IPAK
Дополнительная информация
N-channel Power MOSFET featuring 620V drain-source breakdown voltage and 2.7A continuous drain current. This SuperMESH3™ device offers a typical 2.2 Ohm on-resistance and is housed in a TO-251 IPAK package for through-hole mounting. Key electrical characteristics include a 3.75V threshold voltage, 385pF input capacitance, and fast switching times with a 9ns turn-on delay. Operating across a wide temperature range from -55°C to 150°C, it supports up to 45W of power dissipation and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.9mm |
| Length | 6.6mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 15.6ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2.5R |
| Package/Case | TO-251 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 385pF |
| Power Dissipation | 45W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain to Source Breakdown Voltage | 620V |
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