STU4N52K3
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Краткое описание:
525V 2.5A N-CH MOSFET, 2.1 Ohm, TO-220
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET featuring 525V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a low 2.1 Ohm typical drain-source resistance and 45W power dissipation. Designed for efficient switching, it exhibits 8ns turn-on delay and 14ns fall time. Packaged in TO-220, this RoHS compliant MOSFET operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2.6R |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 334pF |
| Power Dissipation | 45W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.6R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 525V |
| Drain to Source Breakdown Voltage | 525V |
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