STU4N62K3
Производится
Увеличить
Краткое описание:
620V N-CH MOSFET, 3.8A, 2R RdsOn, IPAK
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET featuring 620V drain-source breakdown voltage and 3.8A continuous drain current. This device offers a low 1.7 Ohm typical drain-source on-resistance and is housed in a TO-251 IPAK package for through-hole mounting. Key electrical characteristics include a 30V gate-source voltage rating, 550pF input capacitance, and fast switching times with a 10ns turn-on delay and 19ns fall time. Operating across a wide temperature range of -55°C to 150°C, it supports up to 70W of power dissipation and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.9mm |
| Length | 6.6mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2R |
| Package/Case | TO-251 |
| RoHS Compliant | Yes |
| Input Capacitance | 550pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain to Source Breakdown Voltage | 620V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
