STU5N95K3
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Краткое описание:
N-Ch MOSFET 950V 4A 3R IPAK Through Hole
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET featuring 950V drain-to-source breakdown voltage and 3 Ohm drain-to-source resistance. This through-hole component offers a continuous drain current of 4A and a maximum power dissipation of 90W. It operates within a temperature range of -55°C to 150°C and is housed in a TO-251 IPAK package. Key switching characteristics include a 17ns turn-on delay and an 18ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.9mm |
| Length | 6.6mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 18ns |
| Packaging | Rail/Tube |
| Rds On Max | 3.5R |
| Package/Case | TO-251 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 460pF |
| Power Dissipation | 90W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 950V |
| Drain to Source Breakdown Voltage | 950V |
