STU60N55F3
Снят с производства
Увеличить
Краткое описание:
N-CHANNEL 55V 80A TO-251-3 Through Hole MOSFET
Дополнительная информация
The STU60N55F3 is a high-power N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 55V and a continuous drain current of 80A. The device has a maximum power dissipation of 110W and is packaged in a TO-251-3 through hole package. The STU60N55F3 is RoHS compliant and has a threshold voltage of 4V.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | STripFET™ III |
| Polarity | N-CHANNEL |
| Fall Time | 11.5ns |
| Packaging | Rail/Tube |
| Rds On Max | 8.5mR |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 2.2nF |
| Power Dissipation | 110W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain to Source Breakdown Voltage | 55V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
