STU6N60M2
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Краткое описание:
600V 4.5A N-CH MOSFET, 1.2R Rds On, IPAK
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source voltage and 4.5A continuous drain current. Offers 1.06 Ohm typical drain-source resistance and 60W power dissipation. Designed with a TO-251-3 IPAK package for through-hole mounting. Includes fast switching characteristics with turn-on delay of 9.5ns and fall time of 22.5ns. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.2mm |
| Length | 6.6mm |
| Series | MDmesh™ II Plus |
| Polarity | N-CHANNEL |
| Fall Time | 22.5ns |
| Packaging | Rail/Tube |
| Rds On Max | 1.2R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 232pF |
| Power Dissipation | 60W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 650V |
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