STU6N62K3
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Краткое описание:
620V 5.5A N-CH MOSFET, 1.28 Ohm, IPAK, Through Hole
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET featuring 620V drain-to-source breakdown voltage and 5.5A continuous drain current. This through-hole component offers a low 0.95 Ohm drain-to-source resistance at Vgs=10V, 1.28 Ohm Rds On Max, and 90W maximum power dissipation. Designed for efficient switching with fast turn-on (22ns) and turn-off (49ns) delay times, and a 19ns fall time. Operates across a wide temperature range from -55°C to 150°C and is housed in a TO-251 IPAK package.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.9mm |
| Length | 6.6mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.2R |
| Package/Case | TO-251 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 875pF |
| Power Dissipation | 90W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 49ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.28R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain to Source Breakdown Voltage | 620V |
