STU75N3LLH6-S

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STU75N3LLH6-S - Stmicroelectronics
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Краткое описание: N-CH Power MOSFET 30V 75A TO-251 IPAK
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 75A continuous drain current. This single element transistor is housed in an IPAK package with 3 through-hole pins and a tab, offering a maximum drain-source on-resistance of 5.9 mOhm at 10V. It supports a maximum power dissipation of 60000 mW and operates across a wide temperature range from -55°C to 175°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case IPAK
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.3(Max)
Package Material Plastic
Package Width (mm) 2.4(Max)
Package Family Name TO-251
Package Height (mm) 6.2(Max)
Package Length (mm) 6.6(Max)
Radiation Hardening No
Seated Plane Height (mm) 8.4(Max)
Max Operating Temperature 175°C
Maximum Power Dissipation 60000mW
Min Operating Temperature -55°C
Typical Gate Charge @ Vgs [email protected]nC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 5.9@10VmOhm
Typical Input Capacitance @ Vds 1690@25VpF
Maximum Continuous Drain Current 75A

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