STU7NM60N
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Краткое описание:
600V 5A N-CH Power MOSFET IPAK Through Hole
Дополнительная информация
N-channel Power MOSFET with 600V drain-source voltage and 5A continuous drain current. Features a TO-251 IPAK package with 3 through-hole pins and a tab. MDmesh process technology, 4V gate threshold voltage, and 900mOhm drain-source resistance at 10V. Maximum power dissipation of 45W, operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | IPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.3(Max) |
| Package Material | Plastic |
| Package Width (mm) | 2.4(Max) |
| Process Technology | MDmesh |
| Package Family Name | TO-251 |
| Package Height (mm) | 6.2(Max) |
| Package Length (mm) | 6.6(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 8.4(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 14nC |
| Typical Gate Charge @ Vgs | 14@10VnC |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 900@10VmOhm |
| Typical Input Capacitance @ Vds | 363@50VpF |
| Maximum Continuous Drain Current | 5A |
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