STU8NM50N

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STU8NM50N - Stmicroelectronics
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Краткое описание: 500V 5A N-CH MOSFET TO-251 790mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 500V drain-source voltage and 5A continuous drain current. Offers a low 0.79 ohm Rds(on) at a 10V gate-source voltage. This TO-251 packaged device boasts a maximum power dissipation of 45W and operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include an 8.8ns fall time, 7ns turn-on delay, and 25ns turn-off delay. ROHS compliant and designed for through-hole mounting.
RoHS Compliant
Mount Through Hole
Width 2.4mm
Height 6.9mm
Length 6.6mm
Series MDmesh™ II
Fall Time 8.8ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 790mR
Package/Case TO-251-3
RoHS Compliant Yes
Package Quantity 75
Input Capacitance 364pF
Threshold Voltage 3V
Turn-On Delay Time 7ns
Radiation Hardening No
Turn-Off Delay Time 25ns
Reach SVHC Compliant No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 5A
Drain to Source Voltage (Vdss) 500V

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