STU95N2LH5
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Краткое описание:
80A 25V 4.9mR N-CH MOSFET TO-251
Дополнительная информация
N-Channel Power MOSFET featuring 25V drain-source breakdown voltage and 80A continuous drain current. This through-hole component offers a low 4.9mΩ drain-source on-resistance and 70W power dissipation. Designed for high-efficiency switching, it operates across a wide temperature range of -55°C to 175°C. The TO-251 package ensures compact integration for demanding applications.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.9mm |
| Length | 6.6mm |
| Series | STripFET™ V |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Packaging | Rail/Tube |
| Rds On Max | 4.9mR |
| Package/Case | TO-251 |
| RoHS Compliant | No |
| Input Capacitance | 1.817nF |
| Power Dissipation | 70W |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.9mR |
| Gate to Source Voltage (Vgs) | 22V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain to Source Breakdown Voltage | 25V |
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