STV250N55F3
Снят с производства
Краткое описание:
55V 200A N-CH Power MOSFET, 2.2mR Rds(on), Surface Mount
Дополнительная информация
N-channel power MOSFET featuring 55V drain-source breakdown voltage and a maximum continuous drain current of 200A. Offers a low drain-source on-resistance of 2.2mΩ at 1.5mΩ typical. Designed for surface mounting in a SOP-10 package, this RoHS compliant component operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 300W. Key switching characteristics include a 25ns turn-on delay and 50ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ III |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.2mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 6.8nF |
| Power Dissipation | 300W |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 200A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 2.2MR |
| Drain to Source Breakdown Voltage | 55V |
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