STW10NK80Z
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Краткое описание:
800V N-CH MOSFET, 9A, 900mR RdsOn, TO-247
Дополнительная информация
N-channel SuperMESH™ power MOSFET featuring 800V drain-source breakdown voltage and 9A continuous drain current. Offers 900mΩ maximum drain-source on-resistance and 160W power dissipation. Designed with Zener protection and packaged in a TO-247 through-hole mount. Key switching parameters include 30ns turn-on delay and 17ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 900mR |
| Package/Case | TO-247 |
| Current Rating | 9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 30 |
| Input Capacitance | 2.18nF |
| Power Dissipation | 160W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 900mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 900mR |
| Drain to Source Breakdown Voltage | 800V |
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