STW11NK100Z

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STW11NK100Z - Stmicroelectronics
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Краткое описание: N-Ch MOSFET 1kV 8.3A 1.38R TO-247 Power Transistor
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET featuring 1000V drain-source breakdown voltage and 8.3A continuous drain current. Offers a low 1.38 Ohm typical drain-source on-resistance and 230W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, with a maximum operating temperature of 150°C. Includes fast switching characteristics with turn-on delay of 27ns and fall time of 55ns.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 55ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 1.38R
Package/Case TO-247
Current Rating 8.3A
RoHS Compliant Yes
DC Rated Voltage 1kV
Package Quantity 30
Input Capacitance 3.5nF
Power Dissipation 230W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 27ns
Radiation Hardening No
Turn-Off Delay Time 98ns
Reach SVHC Compliant No
Max Power Dissipation 230W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.38R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 8.3A
Drain to Source Voltage (Vdss) 1kV
Drain-source On Resistance-Max 1.38R
Drain to Source Breakdown Voltage 1kV

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