STW11NM80
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Краткое описание:
800V 11A N-CH MOSFET TO-247 400mR RdsOn
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-to-source breakdown voltage and 11A continuous drain current. This component offers a typical on-resistance of 0.35 Ohm, with a maximum specified at 400mR. Packaged in a TO-247 through-hole mount, it operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 150W. Key switching parameters include a 15ns fall time, 22ns turn-on delay, and 46ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 400mR |
| Package/Case | TO-247 |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 1 |
| Input Capacitance | 1.63nF |
| Power Dissipation | 150W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 400mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 400mR |
| Drain to Source Breakdown Voltage | 800V |
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