STW12NK80Z
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Краткое описание:
800V N-Ch MOSFET, 10.5A, 750mR Rds(on), TO-247
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 10.5A continuous drain current. This component offers a low 750mΩ drain-source on-resistance and is housed in a TO-247 package for through-hole mounting. Key electrical characteristics include a 3.75V threshold voltage and 2.62nF input capacitance, with fast switching speeds indicated by 20ns fall time and 30ns turn-on delay. Maximum power dissipation is rated at 190W, operating within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 750mR |
| Package/Case | TO-247 |
| Current Rating | 10.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 30 |
| Input Capacitance | 2.62nF |
| Power Dissipation | 190W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 750mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 750mR |
| Drain to Source Breakdown Voltage | 800V |
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