STW12NK90Z
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Краткое описание:
900V N-CH MOSFET, 11A, 880mR RdsOn, TO-247
Дополнительная информация
N-channel SuperMESH™ Power MOSFET, 900V drain-source breakdown voltage, 11A continuous drain current, and 880mΩ maximum drain-source on-resistance. Features a TO-247 through-hole package, 230W power dissipation, and operates from -55°C to 150°C. Includes 31ns turn-on delay, 88ns turn-off delay, and 55ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 880mR |
| Package/Case | TO-247 |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| Package Quantity | 600 |
| Input Capacitance | 3.5nF |
| Power Dissipation | 230W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 31ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 88ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 230W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 880mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 880mR |
| Drain to Source Breakdown Voltage | 900V |
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