STW12NK95Z
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Краткое описание:
950V N-CH MOSFET, 10A, 0.72 Ohm, TO-247
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 950V drain-source breakdown voltage and 10A continuous drain current. Offers a maximum drain-source on-resistance of 900mΩ and 950V DC rated voltage. This through-hole component is housed in a TO-247 package with a maximum power dissipation of 230W. Key switching characteristics include a 31ns turn-on delay and 55ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 900mR |
| Package/Case | TO-247 |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 950V |
| Package Quantity | 30 |
| Input Capacitance | 3.5nF |
| Power Dissipation | 230W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 31ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 88ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 230W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 690mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 950V |
| Drain-source On Resistance-Max | 900mR |
| Drain to Source Breakdown Voltage | 950V |
